Surface Passivation for 3-5 Semiconductor Processing : Stable Gallium Sulphide Films by MOCVD
- Kang, Soon
- Nov 1, 1994.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Power, Michael B., Macinnes, Andrew N., Hepp, Aloysius F., Tabib-Azar, Massood, Jenkins, Phillip P., and Barron, Andrew R.
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available. and Free-to-read Unrestricted online access
- Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19950009173., Accession ID: 95N15587., E-9201., NASA-TM-106761., NAS 1.15:106761., and Spring Meeting; 12-16 Apr. 1993; San Francsico, CA; United States.
- No Copyright.
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