Silicon Materials Task of the Low Cost Solar Array Project, Phase 3. Effect of Impurities and Processing on Silicon Solar Cells
- Mollenkopf, H. C.
- Jul 1, 1979.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Blais, P. D., Campbell, R. B., Rohatgi, A., Stapleton, R. E., Rai-Choudhury, P., Mccormick, J. R., Hopkins, R. H., and Davis, J. R.
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available. and Free-to-read Unrestricted online access
- The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19790023599., Accession ID: 79N31770., DOE/JPL-954331-79/7., QR-15., and NASA-CR-162276.
- No Copyright.
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