Actions for Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested

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Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested

Author
Okojie, Robert S.
Published
March 2002.
Physical Description
1 electronic document
Online Version

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Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
High-g accelerometers are needed in certain applications, such as in the study and analysis of high-g impact landings and projectiles. Also, these accelerometers must survive the high electromagnetic fields associated with the all-electric vehicle technology needed for aerospace applications. The choice of SiC is largely due to its excellent thermomechanical properties over conventional silicon-based accelerometers, whose material properties inhibit applicability in high electromagnetic radiation and high temperatures (>150 C) unless more complex and sometimes costly packaging schemes are adopted. This work was the outcome of a NASA Glenn Research Center summer internship program, in collaboration with Cornell University and the Munitions Directorate of the U.S. Air Force in Eglin, Florida. It aimed to provide the enabling technology infrastructure (modeling, fabrication, and validation) for the implementation of SiC accelerometers designed specifically for harsh environments.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 20050204148.
Research and Technology 2001; NASA/TM-2002-211333.
Terms of Use and Reproduction
No Copyright.
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