Gallium Nitride (GaN) with its wide energy bandgap of 3.4 eV holds excellent promise for solar blind UV detectors. We have successfully designed, fabricated and tested GaN p-i-n detectors and detector arrays. The detectors have a peak responsivity of 0.14A/W at 363 nm (3.42 eV) at room temperature. This corresponds to an internal quantum efficiency of 56%. The responsivity decreases by several orders of magnitude to 0.008 A/W at 400 nm (3.10 eV) giving the excellent visible rejection ratio needed for solar-blind applications.
