Semiconductor crystal growth in crossed electric and magnetic fields : Center Director's Discretionary Fund
- Mazuruk, K.
- Jun. 1996.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Volz, M. P.
- hdl.handle.net , Connect to this object online.
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
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- A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.
- Other Subject(s):
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19960027992.
Accession ID: 96N29111.
- No Copyright.
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