Actions for Crystal growth of selected II-VI semiconducting alloys by directional solidification

Email RIS file
Bookmark
Report an Issue

Crystal growth of selected II-VI semiconducting alloys by directional solidification

Author
Su, C.-H.
Published
May 1, 1994.
Physical Description
1 electronic document
Additional Creators
Lehoczky, Sandor L., Andrews, R. N., Sha, Y.-G., Szofran, F. R., Gillies, D. C., and Cobb, S. D.
Online Version

Availability

I Want It
I Want It

Finding items...

Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first United States Microgravity Laboratory (USML-1) mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that HgZnTe alloy ingots partially grown and quenched on the ground can be back-melted and regrown in space under nearly steady state growth conditions. An identical 'ground-truth' experiment was performed following the mission. Preliminary results are presented for both crystals, as well as for a series of other crystals grown prior to the mission for the purposes of optimizing in-flight growth conditions.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19950007800.
Accession ID: 95N14214.
Joint Launch + One Year Science Review of USML-1 and USMP-1 with the Microgravity Measurement Group; p 163-222.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15656431