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Silicon device performance measurements to support temperature range enhancement

Author
Nelms, R. Mark
Published
Mar 28, 1994.
Physical Description
1 electronic document
Additional Creators
Askew, Ray, Weir, Bennett, Bromstead, James, and Johnson, R. Wayne
Online Version

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Summary
Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19940023321.
Accession ID: 94N27824.
NAS 1.26:195265.
NASA-CR-195265.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15659681