Measurement of the minority carrier diffusion length and edge surface-recombination velocity in InP

Author:: Hakimzadeh, Roshanak
Published:: May 1, 1993.
Physical Description:: 1 electronic document
Additional Creators:: Bailey, Sheila G.

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Summary:

A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion length (L(sub n)) and the edge surface-recombination velocity (V(sub s)) in zinc-doped Czochralski-grown InP wafers. Electron-beam-induced current (EBIC) profiles were obtained in specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure V(sub s), and these values were used in a theoretical expression for normalized EBIC. A fit of the experimental data with this expression enabled us to determine L(sub n).

Other Subject(s):

SOLID-STATE PHYSICS

Collection:

NASA Technical Reports Server (NTRS) Collection.

Note:

Document ID: 19940006916.
Accession ID: 94N11388.
Proceedings of the 12th Space Photovoltaic Research and Technology Conference (SPRAT 12); p 64-77.

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