Planar GaAs diodes for THz frequency mixing applications
- Author
- Mattauch, Robert J.
- Published
- JAN 1, 1992.
- Physical Description
- 1 electronic document
- Additional Creators
- Dossal, Hasan, Crowe, Thomas W., and Bishop, William L.
Online Version
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- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- Schottky barrier diodes for terahertz applications are typically fabricated as a micron to sub-micron circular anode metallization on GaAs which is contacted with a sharp wire (whisker). This structure has the benefits of the simplicity of the fabrication of the diode chip, the minimal shunt capacitance of the whisker contact and the ability of the whisker wire to couple energy to the diode. However, whisker-contacted diodes are costly to assembly and difficult to qualify for space applications. Also, complex receiver systems which require many diodes are difficult to assemble. The objective of this paper is to discuss the advantages of planar Schottky diodes for high frequency receiver applications and to summarize the problems of advancing the planar technology to the terahertz frequency range. Section 2 will discuss the structure, fabrication and performance of state-of-the-art planar Schottky diodes. In Section 3 the problems of designing and fabricating planar diodes for terahertz frequency operation are discussed along with a number of viable solutions. Section 4 summarizes the need for further research and cooperation between diode designers and RF engineers.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 19930018587.
Accession ID: 93N27776.
Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 600-615. - Terms of Use and Reproduction
- No Copyright.
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