Silicon carbide semiconductor technology for high temperature and radiation environments
- Matus, Lawrence G.
- JAN 1, 1993.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.
- Document ID: 19930017739.
Accession ID: 93N26928.
Nuclear Propulsion Technical Interchange Meeting, Volume 1; p 445-452.
- No Copyright.
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