Actions for Silicon device performance measurements to support temperature range enhancement

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Silicon device performance measurements to support temperature range enhancement

Author
Johnson, R. Wayne
Published
May 11, 1992.
Physical Description
1 electronic document
Additional Creators
Bromstead, James, Weir, Bennett, and Askew, Ray
Online Version

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Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19930007812.
Accession ID: 93N17001.
NASA-CR-191780.
NAS 1.26:191780.
Terms of Use and Reproduction
No Copyright.
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