In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD
- Chou, P.
- Jan 1, 1991.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Singh, R., Kumar, A., Narayan, J., Hsu, N. J., Sinha, S., and Thakur, R. P. S.
- hdl.handle.net , Connect to this object online.
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
- In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.
- Other Subject(s):
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19920012403.
Accession ID: 92N21646.
NASA. Goddard Space Flight Center, AMSAHTS 1990: Advances in Materials Science and Applications of High Temperature Superconductors; p 317.
- No Copyright.
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