Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches
- Author
- Frasca, A. J.
- Published
- JAN 1, 1991.
- Physical Description
- 1 electronic document
- Additional Creators
- Schwarze, G. E.
Online Version
- hdl.handle.net , Connect to this object online.
- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 19910023096.
Accession ID: 91N32410.
NASA-TM-105248.
NAS 1.15:105248.
AIAA PAPER 91-3525.
E-6577.
Conference on Advanced Space Exploration Initiative Technologies; 4-6 Sep. 1991; Cleveland, OH; United States. - Terms of Use and Reproduction
- No Copyright.
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