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- Crystallizing the grain boundary glass of a liquid phase sintered Si3N4 ceramic for 2 h or less at 1500 C led to formation of gamma Y2Si2O7. After 5 h at 1500 C, the gamma Y2Si2O7 had transformed to beta Y2Si2O7 with a concurrent dramatic increase in dislocation density within beta Si3N4 grains. Reasons for the increased dislocation density is discussed. Annealing for 20 h at 1500 C reduced dislocation densities to the levels found in as-sintered materials.
- Other Subject(s):
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19910022649.
Accession ID: 91N31963.
Crystallization of the Glassy Grain Boundary Phase in Silicon Nitride Ceramics; 12 p.
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View MARC record | catkey: 15679397