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MBE growth technology for high quality strained III-V layers

Author
Liu, John K.
Published
Mar 30, 1990.
Physical Description
1 electronic document
Additional Creators
Grunthaner, Frank J. and Hancock, Bruce R.
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3).
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19900017369.
Accession ID: 90N26685.
NAS 1.71:NPO-17723-1-CU.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15685342