Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films
- Author:
- Spalvins, Talivaldis
- Published:
- Apr 1, 1990.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Steinmann, Pierre A.
Online Version
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- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary:
- By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.
- Other Subject(s):
- Collection:
- NASA Technical Reports Server (NTRS) Collection.
- Note:
- Document ID: 19900011894.
Accession ID: 90N21210.
NAS 1.60:2994.
NASA-TP-2994.
E-5181. - Terms of Use and Reproduction:
- No Copyright.
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