Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

Author:: Longeway, P. A.
Published:: Sep 1, 1989.
Physical Description:: 1 electronic document
Additional Creators:: Palfrey, S. L. and Enstrom, R. E.

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Summary:

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Other Subject(s):

LASERS AND MASERS

Collection:

NASA Technical Reports Server (NTRS) Collection.

Note:

Document ID: 19890019450.
Accession ID: 89N28821.
NASA-CR-181870.
NAS 1.26:181870.

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