Email RIS file
Bookmark
Report an Issue

Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

Author
Bhattacharya, P. K.
Published
JAN 1, 1989.
Physical Description
1 electronic document
Additional Creators
Chen, Y. C., Oh, J. E., and Tsukamoto, S.
Online Version

Availability

I Want It
I Want It

Finding items...

Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19890017369.
Accession ID: 89N26740.
NASA-CR-185439.
NAS 1.26:185439.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15689529