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Effects of electron and proton irradiations on n/p and p/n GaAs cells grown by MOCVD

Author
Weinberg, Irving
Published
JAN 1, 1987.
Physical Description
1 electronic document
Additional Creators
Swartz, Clifford K. and Hart, Russell E., Jr.
Online Version

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Summary
State-of-the-art n/p and p/n heteroface GaAs cells, processed by metal organic chemical vapor deposition, were irradiated by 1 MeV electrons and 37 MeV protons and their performance determined as a function of fluence. It was found that the p/n cells were more radiation resistant than the n/p cells. The increased loss in the n/p cells was attributed to increases in series resistance and losses in the p-region resulting from the irradiation. The greater loss in fill factor observed for the n/p cells introduces the possibility that the presently observed superiority of the p/n cells may not be an intrinsic property of this configuration in GaAs.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19880000884.
Accession ID: 88N10266.
E-3792.
NAS 1.15:100199.
NASA-TM-100199.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15697123