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The 20 GHz power GaAs FET development

Author
Crandell, M.
Published
Sep 1, 1986.
Physical Description
1 electronic document
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. The major efforts include GaAs FET device development (both 1 W and 2 W devices), and the development of an amplifier module using these devices.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19870007539.
Accession ID: 87N16972.
S/N-36778.
NAS 1.26:179546.
NASA-CR-179546.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15700619