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- Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.
- Other Subject(s):
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19860002668.
Accession ID: 86N12135.
Meeting of the Electrochem. Soc.; 11-17 Oct. 1985; Las Vegas, NV; United States.
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View MARC record | catkey: 15703824