Actions for Heavy doping effects in high efficiency silicon solar cells

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Heavy doping effects in high efficiency silicon solar cells

Author
Lindholm, F. A.
Published
Dec 31, 1984.
Physical Description
1 electronic document
Additional Creators
San, C. T., Neugroschel, A., and Landsberg, P. T.
Online Version

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Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
A model for bandgap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones, give an agreement between the model and experiments on n- and p-type silicon which is good as far as transport measurements in the 300 K range. The discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent, optical determinations of band gap shrinkage at 5 K.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19850017629.
Accession ID: 85N25940.
NAS 1.26:175681.
JPL-9950-1033.
DOE/JPL-956525-85/6.
NASA-CR-175681.
DRL-198.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15704978