Surface and allied studies in silicon solar cells
- Lindholm, F. A.
- JAN 1, 1984.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available. and Free-to-read Unrestricted online access
- Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19850012221., Accession ID: 85N20531., NASA-CR-174447., DOE/JPL-956525-83/3., QR-3., NAS 1.26:174447., and JPL-9950-933.
- No Copyright.
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