Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells
- Author
- Weinberg, I.
- Published
- JAN 1, 1984.
- Physical Description
- 1 electronic document
- Additional Creators
- Mehta, S. and Swartz, C. K.
Online Version
- hdl.handle.net , Connect to this object online.
- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 19840014822.
Accession ID: 84N22890.
NAS 1.15:83646.
E-2091.
NASA-TM-83646.
Photovoltaic Spec. Conf.; 1-4 May 1984; Kissimmee, FL; United States. - Terms of Use and Reproduction
- No Copyright.
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