A study of nucleation and growth of thin films by means of computer simulation : General features
- Salik, J.
- JAN 1, 1984.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- Some of the processes involved in the nucleation and growth of thin films were simulated by means of a digital computer. The simulation results were used to study the nucleation and growth kinetics resulting from the various processes. Kinetic results obtained for impingement, surface migration, impingement combined with surface migration, and with reevaporation are presented. A substantial fraction of the clusters may form directly upon impingement. Surface migration results in a decrease in cluster density, and reevaporation of atoms from the surface causes a further reduction in cluster density.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19840009914.
Accession ID: 84N17982.
Intern. Conf. on Metall. Coatings; 9-13 Apr. 1984; San Diego, CA; United States.
- No Copyright.
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