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TEM and SEM (EBIC) investigations of silicon bicrystals

Author
Ast, D. G.
Published
Jul 1, 1983.
Physical Description
1 electronic document
Additional Creators
Gleichmann, R.
Online Version

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Summary
The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19830027618.
Accession ID: 83N35889.
NAS 1.26:173107.
DOE/JPL-956046-83/7.
JPL-9950-867.
NASA-CR-173107.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15711399