Silicon sheet with molecular beam epitaxy for high efficiency solar cells
- Allen, F. G.
- JAN 1, 1983.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available. and Free-to-read Unrestricted online access
- The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19830027224., Accession ID: 83N35495., NASA-CR-173113., AR-1., DOE/JPL-956223-83/1., and NAS 1.26:173113.
- No Copyright.
View MARC record | catkey: 15711426