Actions for Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

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Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Author
Guyer, T.
Published
Feb 1, 1983.
Physical Description
1 electronic document
Additional Creators
Virkar, A. V., Natesh, R., Stringfellow, G. B., and Dunn, J.
Online Version

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Unclassified, Unlimited, Publicly available.
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Summary
Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19830015429.
Accession ID: 83N23700.
NAS 1.26:170239.
JPL-9950-808.
DOE/JPL-955676-4.
NASA-CR-170239.
Terms of Use and Reproduction
No Copyright.
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