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Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C

Author:
Guyer, T.
Published:
Aug 1, 1982.
Physical Description:
1 electronic document
Additional Creators:
Stringfellow, G. B. and Natesh, R.
Online Version

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Summary:
Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected.
Other Subject(s):
Collection:
NASA Technical Reports Server (NTRS) Collection.
Note:
Document ID: 19830006409.
Accession ID: 83N14680.
DOE/JPL-955676-2.
NASA-CR-169617.
NAS 1.26:169617.
MRI-290.
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No Copyright.
View MARC record | catkey: 15713986