Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness
- Dec 31, 1980.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- The design and development of an advanced Czochralski crystal grower are described. Several exhaust gas analysis system equipment specifications studied are discussed. Process control requirements were defined and design work began on the melt temperature, melt level, and continuous diameter control. Sensor development included assembly and testing of a bench prototype of a diameter scanner system.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19820016847.
Accession ID: 82N24723.
- No Copyright.
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