Development of thin wraparound junction silicon solar cells
- Iles, P. A.
- Nov 1, 1981.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Ho, F.
- hdl.handle.net , Connect to this object online.
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
- The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.
- Other Subject(s):
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19820010815.
Accession ID: 82N18689.
- No Copyright.
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