Actions for Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID).

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Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID).

Author
Parrish, W. D.
Published
Sep 1, 1981.
Physical Description
1 electronic document
Additional Creators
Thom, R. D. and Koch, T. L.
Online Version

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Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19810023447.
Accession ID: 81N31990.
NASA-CR-165766.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15718081