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X-ray topography study of complex silicon microcircuits

Author
Parker, D. L.
Published
Apr 1, 1981.
Physical Description
1 electronic document
Online Version

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Unclassified, Unlimited, Publicly available.
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Summary
The correlation between the yield of silicon microcircuits wafers versus defects observed in X-ray topographs produced by a high speed curved wafer X-ray topographic camera was investigated. Most of the topographs were made after final wafer probe. Results indicated that most high volume silicon wafer processing does not need X-ray topography as a routine process control. It is further indicated that in changing any existing process or developing a new process the technique can be of significant benefit.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19810018868.
Accession ID: 81N27406.
NASA-CR-161815.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15718605