- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19810010870.
Accession ID: 81N19397.
- No Copyright.
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