Satellite Power Systems (SPS) concept definition study. Volume 6 : In-depth element investigation
- Hanley, G. M.
- Sep 1, 1980.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- The fabrication parameters of GaAs MESFET solid-state amplifiers considering a power added conversion efficiency of at least 80% and power gains of at least 10dB were determined. Operating frequency was 2.45 GHz although 914 MHz was also considered. Basic circuit to be considered was either Class C or Class E amplification. Two modeling programs were utilized. The results of several computer calculations considering differing loads, temperatures, and efficiencies are presented. Parametric data in both tabular and plotted form are presented.
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 19800024351.
Accession ID: 80N32859.
- No Copyright.
View MARC record | catkey: 15721172