Diffusion length measurements of thin GaAs solar cells by means of energetic electrons
- Vonross, O.
- Feb 1, 1980.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- A calculation of the short circuit current density (j sub sc) of a thin GaAs solar cell induced by fast electrons is presented. It is shown that in spite of the disparity in thickness between the N-type portion of the junction and the P-type portion of the junction, the measurement of the bulk diffusion length L sub p of the N-type part of the junction is seriously hampered due to the presence of a sizable contribution to the j sub sc from the P-type region of the junction. Corrections of up to 50% had to be made in order to interpret the data correctly. Since these corrections were not amenable to direct measurements it is concluded that the electron beam method for the determination of the bulk minority carrier diffusion length, which works so well for Si solar cells, is a poor method when applied to thin GaAs cells.
- Document ID: 19800008229.
Accession ID: 80N16489.
- No Copyright.
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