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Diode step stress program for JANTX1N5417

Published
Jan 1, 1979.
Physical Description
1 electronic document
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
The effect of power/temperature step stress was studied when applied to the diode JANTX1N5417 manufactured by Micro Semiconductor and Semtech. Test results and failure analyses are included.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19790010043.
Accession ID: 79N18214.
NASA-CR-161135.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15726370