Actions for Diode step stress program for JANTX1N2970b

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Diode step stress program for JANTX1N2970b

Published
Feb 1, 1979.
Physical Description
1 electronic document
Online Version

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Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Data for the purpose of evaluating the effect of power/temperature step stress was studied when applied to the zener diode JANTX1N2970B manufactured by Siemens and General Semiconductor, Inc. A total of 48 samples from each manufacturer was submitted to the process. In addition, two control sample units were maintained for verification of the electrical parametric testing. The tests for determining power/temperature stresses are described, and test results are discussed. Failure analyses for power stress, and temperature stress are presented.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19790010038.
Accession ID: 79N18209.
NASA-CR-161130.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15726375