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LSSA large area silicon sheet task continuous Czochralski process development

Author
Rea, S. N.
Published
Oct 1, 1978.
Physical Description
1 electronic document
Online Version

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Unclassified, Unlimited, Publicly available.
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Summary
A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19790006383.
Accession ID: 79N14554.
TI-03-78-46.
NASA-CR-158042.
DOE/JPL-954887-78/4.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15726874