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High efficiency thin-film GaAs solar cells

Author
Stirn, R. J.
Published
Sep 1, 1977.
Physical Description
1 electronic document
Online Version

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub oc) of metal-GaAs Schottky barrier solar cells, the oxide chemistry, attempts to measure surface state parameters, the evolving characteristics of the solar cell as background contamination (has been decreased, but not eliminated), results of focused Nd/YAG laser beam recrystallization of Ge films evaporated onto tungsten, and studies of AMOS solar cells fabricated on sliced polycrystalline GaAs wafers. Also discussed are projected materials availability and costs for GaAs thin-film solar cells.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19780004583.
Accession ID: 78N12526.
NASA-CR-155323.
JPL-PUB-77-60.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 15730540