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Cameras for semiconductor process control

Author
Porter, W. A.
Published
Aug 1, 1977.
Physical Description
1 electronic document
Additional Creators
Parker, D. L.
Online Version

Availability

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Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19780003426.
Accession ID: 78N11369.
NASA-CR-150459.
Terms of Use and Reproduction
No Copyright.
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