Prediction and measurement of radiation damage to CMOS devices on board spacecraft
- Author:
- Sing, M.
- Published:
- Oct 1, 1976.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Danchenko, V.
Stassinopoulos, E. G.
Brucker, G. J.
Ohanian, R. S.
Cliff, R. A. - Access Online:
- hdl.handle.net
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- Summary:
- The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.
- Collection:
- NASA Technical Reports Server (NTRS) Collection.
- Note:
- Document ID: 19770006390.
Accession ID: 77N13333.
X-700-76-227.
NASA-TM-X-71230. - Terms of Use and Reproduction:
- No Copyright.
- Access Online:
- hdl.handle.net
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