Chemical vapor deposition growth
- Author
- Moudy, L. A.
- Published
- Jul 1, 1976.
- Physical Description
- 1 electronic document
- Additional Creators
- Ruth, R. P., Manasevit, H. M., Yang, J. J., Simpson, W. I., and Kenty, J. L.
Online Version
- hdl.handle.net , Connect to this object online.
- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 19760021303.
Accession ID: 76N28391.
ERDA/JPL-954372-76/2.
C76-320.2/501.
NASA-CR-148537.
QR-2. - Terms of Use and Reproduction
- No Copyright.
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