Precise measurement of charged defects in III-V compounds (2).
- Soest, J. F.
- Apr 28, 1972.
- Physical Description:
- 1 electronic document
- Restrictions on Access:
- Unclassified, Unlimited, Publicly available.
- The main objective of this research is to obtain a calibration of a low concentration of charged defects in some III-V semiconducting compounds. The experimental technique being used is nuclear magnetic resonance (NMR), and the objective is to be attained through a thorough examination of the properties of the NMR lines of the nuclei in the III-V compounds. The properties of the NMR lines, and how they are influenced by the presence of charged defects are studied theoretically and experimentally.
- Document ID: 19730009054.
Accession ID: 73N17781.
- No Copyright.
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