Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model
- Biegel, Bryan A.
- Physical Description:
- 1 electronic document
- Additional Creators:
- Yu, Zhi-Ping, Ancona, Mario, Rafferty, Conor, and Saini, Subhash
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- We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.
- Other Subject(s):
- NASA Technical Reports Server (NTRS) Collection.
- Document ID: 20020078415.
APS Centennial Meeting; 23 Mar. 1999; Atlanta, GA; United States.
- No Copyright.
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