Actions for Modeling of Electronic Transport in Scanning Tunneling Microscope Tip-Carbon Nanotube Systems

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Modeling of Electronic Transport in Scanning Tunneling Microscope Tip-Carbon Nanotube Systems

Author
Kwak, Dochan
Published
[2000].
Physical Description
1 electronic document
Additional Creators
Yamada, Toshishige
Online Version

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Summary
A model is proposed for two observed current-voltage (I-V) patterns in a recent experiment with a scanning tunneling microscope tip and a carbon nanotube. We claim that there are two mechanical contact modes for a tip (metal) -nanotube (semiconductor) junction (1) with or (2) without a tiny vacuum gap (0.1 - 0.2 nm). With the tip grounded, the tunneling case in (1) would produce large dI/dV with V > 0, small dI/dV with V < 0, and I = 0 near V = 0 for an either n- or p-nanotube; the Schottky mechanism in (2) would result in I does not equal 0 only with V < 0 for an n-nanotube, and the bias polarities would be reversed for a p-nanotube. The two observed I-V patterns are thus entirely explained by a tip-nanotube contact of the two types, where the nanotube must be n-type.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 20010106053.
Terms of Use and Reproduction
No Copyright.
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