High-Q X-Band and K-Band Micromachined Spiral Inductors for Use in Si-Based ICs
- Author
- Bhattacharya, Pallab
- Published
- [2000].
- Physical Description
- 1 electronic document
- Additional Creators
- Katehi, Linda P. B., Ponchak, George E., and Lu, Liang-Hung
Online Version
- hdl.handle.net , Connect to this object online.
- Restrictions on Access
- Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access - Summary
- A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters measurement is taken to characterize the performance of the inductors. With an etch depth of 20 micron, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe/Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.
- Other Subject(s)
- Collection
- NASA Technical Reports Server (NTRS) Collection.
- Note
- Document ID: 20000057362.
Silicon Monolithic Integrated Circuits in RF Systems; 26-28 Apr. 2000; Garmisch; Germany. - Terms of Use and Reproduction
- No Copyright.
View MARC record | catkey: 15970359