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A New Method to Grow SiC : Solvent-Laser Heated Floating Zone

Author
Neudeck, Philip G.
Published
November 23, 2012.
Physical Description
1 electronic document
Additional Creators
Sayir, Ali and Woodworth, Andrew A.
Online Version

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Summary
The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 20120016720.
E-18524.
GRC-E-DAA-TN6020.
6th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium); 19-23 Nov. 2012; Kona, HI; United States.
Terms of Use and Reproduction
Copyright, Distribution as joint owner in the copyright.
View MARC record | catkey: 15976784