Actions for Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

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Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Author
Harrap, V.
Published
Oct 1, 1971.
Physical Description
1 electronic document
Additional Creators
Brown, G. A.
Online Version

Availability

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19710000373.
Accession ID: 71B10375.
GSC-10835.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 16207845