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Development of Curie point switching for thin film, random access, memory device

Author
Lewicki, G. W.
Published
Dec 1, 1967.
Physical Description
1 electronic document
Additional Creators
Tchernev, D. I.
Online Version

Availability

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Restrictions on Access
Unclassified, Unlimited, Publicly available.
Free-to-read Unrestricted online access
Summary
Managanese bismuthide films are used in the development of a random access memory device of high packing density and nondestructive readout capability. Memory entry is by Curie point switching using a laser beam. Readout is accomplished by microoptical or micromagnetic scanning.
Other Subject(s)
Collection
NASA Technical Reports Server (NTRS) Collection.
Note
Document ID: 19670000632.
Accession ID: 67B10633.
NPO-10402.
Terms of Use and Reproduction
No Copyright.
View MARC record | catkey: 16210139